Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers

Applied Physics Letters

Volumn 76, Issue 15, 2000, Pages 2080-2082

  Wallart, X ^a   Schuler, O ^a   Deresmes, D ^a   Mollot, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039407315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126261     Document Type: Article

References (13)

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