Effect of inserting a buffer layer on the characteristics of transparent conducting impurity-doped ZnO thin films prepared by dc magnetron sputtering

Thin Solid Films

Volumn 519, Issue 5, 2010, Pages 1587-1593

  Nomoto, Jun Ichi ^a   Oda, Jun Ichi ^a   Miyata, Toshihiro ^a   Minami, Tadatsugu ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AZO; Buffer layer; GZO; Magnetron sputtering; Thin film; Transparent conducting oxide film; Transparent electrode; ZnO

Indexed keywords

AZO; GZO; TRANSPARENT CONDUCTING OXIDE FILMS; TRANSPARENT ELECTRODE; ZNO;

BUFFER LAYERS; CARRIER CONCENTRATION; CONDUCTIVE FILMS; DEPOSITION; GALLIUM; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; GLASS; HALL MOBILITY; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; OXIDE FILMS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

FILM PREPARATION;

EID: 78649754563     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.08.093     Document Type: Conference Paper

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