Theoretical investigation about secondary deposition of thin-film formation by molecular dynamics simulation

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 530-536

  Chen, Huawei ^a,c   Hagiwara, Ichiro ^b   Kiet Tieu, A ^a   Kishimoto, Kikuo ^b   Liu, Qiang ^c  

^a UNIVERSITY OF WOLLONGONG   (Australia)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c BEIHANG UNIVERSITY   (China)

Author keywords

A1. Computer simulation; A1. Growth models; A1. Molecular dynamics; A3. Chemical vapor deposition process; A3. Epitaxial growth; A3. Secondary deposition; A3. Thin film

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; THIN FILMS;

EXFOLIATION PATTERNS; GAS FLUIDS; GROWTH MECHANISMS; SECONDARY DEPOSITION;

FILM GROWTH;

EID: 34247231604     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.01.026     Document Type: Article

References (7)

1. Müller G., Deimal P.P., Hellmich W., and Wagner C. Thin Solid Films 296 (1997) 157
2. Blackburn J.M., Long D.P., Cabañas A., and Watkins J.J. Science 294 (2001) 141
3. Chen H., Hagiwara I., Zhang D., and Huang T. J. Crystal Growth 276 (2005) 281
4. Chen H., Hagiwara I., Huang T., and Zhang D. Synth. Met. 155 (2005) 652
5. Hwang N. J. Crystal Growth 198/199 (1999) 85
6. Adams J.B., Wang Z., and Li Y. Thin Solid Films 365 (2000) 201
7. Chen H., Nakata S., Ishihara M., Yamada S., and Hagiwara I. Trans. JSCES 7 (2005) 23