An atomic-scale study of hydrogenated silicon cluster deposition on a crystalline silicon surface

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6234-6238

  Ning, Ning ^a   Rinaldi, Steven M ^a   Vach, Holger ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Deposition mechanism; Hydrogenated silicon clusters; Molecular dynamics simulations; Silicon surface

Indexed keywords

ATOMIC SCALE; CONTROLLED DEPOSITION; CRYSTALLINE SILICON SURFACES; DEPOSITION MECHANISM; DEPOSITION PROCESS; HYDROGENATED SILICON; HYDROGENATED SILICON CLUSTERS; IMPACT ENERGY; MOLECULAR DYNAMICS SIMULATIONS; POTENTIAL APPLICATIONS; SI(1 0 0); SILICON SURFACE; SOLID SURFACE; SUBSTRATE TEMPERATURE; TERSOFF POTENTIAL;

ATOMS; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRONIC PROPERTIES; HYDROGENATION; MOLECULAR DYNAMICS;

SURFACE PROPERTIES;

EID: 68349122706     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.086     Document Type: Article

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