Atomic scale analysis of ultrathin SiO2 films prepared on TiO2(100) surfaces

Journal of Physical Chemistry C

Volumn 114, Issue 47, 2010, Pages 20189-20194

  Sasahara, Akira ^a   Pang, Chi Lun ^a,b   Tomitori, Masahiko ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AFM OBSERVATION; ANNEALING TIME; ATOMIC-SCALE ANALYSIS; FLAT TERRACES; FREQUENCY MODULATION ATOMIC FORCE MICROSCOPY; LEED PATTERNS; PEAK INTENSITY RATIO; PURE WATER; TIO; ULTRA-THIN; XPS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; FREQUENCY MODULATION; LANDFORMS; LOW ENERGY ELECTRON DIFFRACTION; OXIDE MINERALS; QUARTZ; SILICON; SILICON COMPOUNDS; SOIL CONSERVATION; TITANIUM; TITANIUM DIOXIDE; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON OXIDES;

EID: 78649538115     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp108380r     Document Type: Article

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