Fabrication of indium gallium zinc oxide (IGZO) TFTs using a solution-based process

Molecular Crystals and Liquid Crystals

Volumn 529, Issue , 2010, Pages 137-146

  Park, Mi Sun ^a   Lee, Doo Hyoung ^a   Bae, Eun Jin ^a   Kim, Dae Hwan ^b   Kang, Jin Gyu ^b   Son, Dae Ho ^b   Ryu, Si Ok ^a  

^a Yeungnam University   (South Korea)

^b Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

Indium gallium zinc oxide (IGZO); solution based deposition; TFTs; thin film; transparent amorphous conducting oxide semiconductor

Indexed keywords

CONDUCTING OXIDES; DE-WETTING; DEPOSITION PROCESS; FIELD-EFFECT MOBILITIES; INDIUM GALLIUM ZINC OXIDES; LOW-COST SOLUTION; METAL HALIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOLAR RATIO; MOS-FET; PRECURSOR SOLUTIONS; SOLUTION BASED DEPOSITION; SPIN COATING PROCESS; TFTS; TRANSPARENT CONDUCTING OXIDE; TURN ON VOLTAGE; VISIBLE REGION; VOLUME RATIO; ZNO STRUCTURES;

ACETONITRILE; AMORPHOUS FILMS; CHEMICAL PROPERTIES; COATINGS; DEPOSITION; ETHYLENE; ETHYLENE GLYCOL; FABRICATION; FIELD EFFECT TRANSISTORS; METAL HALIDES; MOSFET DEVICES; ORGANIC SOLVENTS; OXIDE FILMS; SEMICONDUCTING INDIUM; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC COATINGS; ZINC OXIDE;

FILM PREPARATION;

EID: 78649460680     PISSN: 15421406     EISSN: 15635287     Source Type: Journal    
DOI: 10.1080/15421406.2010.495892     Document Type: Conference Paper

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