Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 4011-4014

  Lee, Keun Woo ^a   Heo, Kon Yi ^a   Oh, Sang Hoon ^a   Moujoud, Abderrafia ^a   Kim, Gun Hee ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

Carrier transport rod; IGZO SWNTs blend; Semiconducting II III materials; Single walled carbon nanotubes (SWNTs); Solution based thin film transistors

Indexed keywords

ACTIVE LAYERS; ELECTRICAL CHARACTERISTICS; FABRICATED DEVICES; FLEXIBLE DEVICES; IGZO/SWNTS BLEND; INDIUM GALLIUM ZINC OXIDES; LOW-LEAKAGE CURRENTS; ON/OFF RATIOS; SATURATION FIELDS; SEMICONDUCTING II-III MATERIALS;

INDIUM; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

CARBON NANOTUBES;

EID: 65449155806     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.145     Document Type: Article

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