6.3-GHz film bulk acoustic resonator structures based on a gallium nitride/silicon thin Membrane

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 799-801

  Müller, Alexandru ^a   Neculoiu, Dan ^a   Konstantinidis, George ^b   Stavrinidis, Antonis ^b   Vasilache, Dan ^a   Cismaru, Alina ^a   Danila, Mahai ^a   Dragoman, Mircea ^a   Deligeorgis, George ^b   Tsagaraki, Katerina ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

Membranes; Micromachining; Microwave measurements; Resonators; Semiconductor films

Indexed keywords

BACKSIDE METALLIZATION; FBAR STRUCTURES; FILM BULK ACOUSTIC RESONATORS; LOW STRESS; METALLIZATIONS; MICROWAVE CHARACTERIZATION; QUALITY FACTORS; RESONANCE FREQUENCIES; SEMICONDUCTOR FILMS; TEST STRUCTURE; THICK MEMBRANES; THIN MEMBRANE; WHITE LIGHT; X- RAY DIFFRACTION;

ACOUSTIC RESONATORS; COMPOSITE MICROMECHANICS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; METALLIZING; MICROMACHINING; MICROWAVE ACOUSTICS; MICROWAVE MEASUREMENT; MICROWAVES; RESONANCE; RESONATORS; SEMICONDUCTING GALLIUM;

MEMBRANES;

EID: 68249144761     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2023538     Document Type: Article

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