Influences of interface states on resistive switching properties of TiOx with different electrodes

Chinese Physics Letters

Volumn 27, Issue 11, 2010, Pages

  Ze, Jia ^a   Lin Kai, Wang ^a   Tian Ling, Ren ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; METAL INSULATOR BOUNDARIES; MIM DEVICES; OHMIC CONTACTS; OXYGEN VACANCIES; THIN FILMS;

AG ELECTRODE; INTERFACES STATE; METAL-INSULATOR-METAL STRUCTURES; OXIDIZATION; PT ELECTRODE; PT-ELECTRODES; RESISTIVE SWITCHING; SWITCHING PROPERTIES; THIN-FILMS; TIO;

INTERFACE STATES;

EID: 78649372648     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/11/118503     Document Type: Article

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