Effect of Zn interstitials on enhancing ultraviolet emission of zno films deposited by MOCVD

Chinese Physics Letters

Volumn 27, Issue 9, 2010, Pages

  Zhong, Z ^a   Sun, L J ^a   Chen, X Q ^a   Wu, X P ^a   Fu, Z X ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; METALLIC FILMS; ORGANIC CHEMICALS; ORGANOMETALLICS; PILES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

CHEMICAL VAPOR DEPOSITION METHODS; COMPOSITION RATIO; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; MOLAR RATIO; SI(111) SUBSTRATE; STOICHIOMETRIC COMPOSITIONS; ULTRAVIOLET EMISSION; X-RAY PHOTOELECTRONS; ZN-INTERSTITIAL; ZNO FILMS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 78649358984     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/9/096101     Document Type: Article

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