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Volumn 12, Issue 12, 2010, Pages 1966-1969
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Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles
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Author keywords
Aluminum; Memory; Nanoparticle; ZnO
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Indexed keywords
AL-NANOPARTICLES;
ELECTRICAL PROPERTY;
FLOATING GATE NODES;
INTEGRATED ELECTRONICS;
LOW-TEMPERATURE PROCESS;
MEMORY;
NANOFLOATING GATE MEMORY;
NON-VOLATILE;
ON/OFF RATIO;
OXIDE LAYER;
TEMPERATURE-SENSITIVE;
THRESHOLD VOLTAGE SHIFTS;
ZNO;
ZNO FILMS;
ALUMINUM;
ELECTRIC PROPERTIES;
ELECTRON MOBILITY;
FLASH MEMORY;
SILICON COMPOUNDS;
THIN FILM TRANSISTORS;
THRESHOLD VOLTAGE;
ZINC OXIDE;
NANOPARTICLES;
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EID: 78649317609
PISSN: 12932558
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2010.08.008 Document Type: Article |
Times cited : (7)
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References (16)
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