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Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

Geometry- and size-dependence of electrical properties of metal contacts on semiconducting nanowires

(4) Park, Hongsik a Beresford, Roderic a Hong, Seungbum b Xu, Jimmy a

a Brown University (United States)

b ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER WIDTHS; CONTACT EFFECT; CONTACT REGIONS; DOPING CONCENTRATION; ELECTRICAL PROPERTY; FORCE BARRIERS; LAYER WIDTH; METAL CONTACTS; METAL-SEMICONDUCTOR CONTACTS; NANOWIRE DEVICES; SEMICONDUCTING NANOWIRES; SIZE-DEPENDENCE; SIZE-DEPENDENT EFFECT; SPECIFIC CONTACT RESISTANCES; THEORETICAL STUDY; TRANSMISSION LINE MODELS;

ELECTRIC PROPERTIES; ELECTRIC WIRE; NANOWIRES;

SEMICONDUCTOR DEVICES;

EID: 78649298261 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3499698 Document Type: Article

Times cited : (26)

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