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Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires

(5) Wang, Zhong Rui a,b Zhang, Gang b Pey, Kin Leong a Tung, Chih Hang b Lo, Guo Qiang b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b INSTITUTE OF MICROELECTRONICS (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONTACT PROPERTIES; DEPLETION REGION; DIAMETER DEPENDENT; ELECTRICAL CONTACTS; GEOMETRICAL DIMENSIONS; INTERFACIAL OXIDE LAYERS; MATERIAL CONFIGURATIONS; METAL CONTACTS; ROOM TEMPERATURE; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY BEHAVIORS; SILICON NANOWIRES; SPECIFIC CONTACT RESISTANCES; SYSTEMATIC STUDY; ULTRA LOW TEMPERATURES;

ELECTRIC CONTACTS; ELECTRIC WIRE; NANOWIRES; SCHOTTKY BARRIER DIODES;

ELECTRIC NETWORK ANALYSIS;

EID: 67249145119 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3117490 Document Type: Article

Times cited : (10)

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