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Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

Improved hole confinement in GaInAsN-GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers

(3) Albo, Asaf a Bahir, Gad a Fekete, Dan a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BAND OFFSETS; BI-LAYER; BI-LAYER STRUCTURE; BILAYER QUANTUM WELLS; DOUBLE LAYERS; ELECTRON HOLE; GAAS BARRIERS; GAASSBN; HIGH OPTICAL GAIN; HOLE CONFINEMENT; INDEPENDENT CONTROL; LASER PERFORMANCE; PHOTOLUMINESCENCE INTENSITIES; QUANTUM WELL; QUANTUM WELL STRUCTURES; SHORT-PERIOD SUPERLATTICES; TELECOM; TEMPERATURE DEPENDENCE; TEMPERATURE SENSITIVITY; THIN LAYERS; WAVELENGTH LASERS;

GALLIUM ALLOYS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 78649270051 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3503435 Document Type: Article

Times cited : (16)

References (24)

1
- 0347147903
- APPLAB 0003-6951,. 10.1063/1.101260
- S. E. Fischer, R. G. Waters, D. Fekete, J. M. Ballantyne, Y. C. Chen, and B. A. Soltz, Appl. Phys. Lett. APPLAB 0003-6951 54, 1861 (1989). 10.1063/1.101260
- (1989) Appl. Phys. Lett. , vol.54 , pp. 1861
- Fischer, S.E.¹ Waters, R.G.² Fekete, D.³ Ballantyne, J.M.⁴ Chen, Y.C.⁵ Soltz, B.A.⁶

2
- 36549096820
- APPLAB 0003-6951,. 10.1063/1.97258
- D. Feketa, K. T. Chan, J. M. Ballantyne, and L. F. Eastman, Appl. Phys. Lett. APPLAB 0003-6951 49, 1659 (1986). 10.1063/1.97258
- (1986) Appl. Phys. Lett. , vol.49 , pp. 1659
- Feketa, D.¹ Chan, K.T.² Ballantyne, J.M.³ Eastman, L.F.⁴

3
- 40749161085
- (Springer, Berlin). 10.1007/978-3-540-74529-7
- A. Erol, Dilute Nitride Semiconductors and Material Systems (Springer, Berlin, 2008). 10.1007/978-3-540-74529-7
- (2008) Dilute Nitride Semiconductors and Material Systems
- Erol, A.¹

4
- 40749103092
- IEJQA7 0018-9197,. 10.1109/JQE.2007.902301
- S. R. Bank, H. Bae, L. L. Goddar, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, Jr., IEEE J. Quantum Electron. IEJQA7 0018-9197 43, 773 (2007). 10.1109/JQE.2007.902301
- (2007) IEEE J. Quantum Electron. , vol.43 , pp. 773
- Bank, S.R.¹ Bae, H.² Goddar, L.L.³ Yuen, H.B.⁴ Wistey, M.A.⁵ Kudrawiec, R.⁶ Harris, Jr.J.S.⁷

5
- 0036684590
- IPTLEL 1041-1135,. 10.1109/LPT.2002.1021966
- N. Tansu and L. J. Mawst, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 14, 1052 (2002). 10.1109/LPT.2002.1021966
- (2002) IEEE Photonics Technol. Lett. , vol.14 , pp. 1052
- Tansu, N.¹ Mawst, L.J.²

6
- 0001661246
- APPLAB 0003-6951,. 10.1063/1.125928
- M. Hetterich and M. D. Dawson, Appl. Phys. Lett. APPLAB 0003-6951 76, 1030 (2000). 10.1063/1.125928
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1030
- Hetterich, M.¹ Dawson, M.D.²

7
- 0037429874
- APPLAB 0003-6951,. 10.1063/1.1558218
- N. Tansu and L. J. Mawst, Appl. Phys. Lett. APPLAB 0003-6951 82, 1500 (2003). 10.1063/1.1558218
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1500
- Tansu, N.¹ Mawst, L.J.²

8
- 1642633883
- IPTLEL 1041-1135,. 10.1109/LPT.2004.823715
- J. Y. Yeh, N. Tansu, and L. J. Mawst, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 16, 741 (2004). 10.1109/LPT.2004.823715
- (2004) IEEE Photonics Technol. Lett. , vol.16 , pp. 741
- Yeh, J.Y.¹ Tansu, N.² Mawst, L.J.³

9
- 33748496891
- Thermal quenching mechanism of photoluminescence in 1.55 μm GalnNAsSb/Ga(N)As quantum-well structures
- DOI 10.1063/1.2345240
- H. D. Sun, S. Calvez, and M. D. Dawson, Appl. Phys. Lett. APPLAB 0003-6951 89, 101909 (2006). 10.1063/1.2345240 (Pubitemid 44359608)
- (2006) Applied Physics Letters , vol.89 , Issue.10 , pp. 101909
- Sun, H.D.¹ Calvez, S.² Dawson, M.D.³ Gupta, J.A.⁴ Aers, G.C.⁵ Sproule, G.I.⁶

10
- 17044367903
- Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers
- DOI 10.1063/1.1864253, 071116
- H. Carr̀re, X. Marie, J. Barrau, and T. Amand, Appl. Phys. Lett. APPLAB 0003-6951 86, 071116 (2005). 10.1063/1.1864253 (Pubitemid 40495331)
- (2005) Applied Physics Letters , vol.86 , Issue.7 , pp. 1-3
- Carrre, H.¹ Marie, X.² Barrau, J.³ Amand, T.⁴

11
- 0036539579
- Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers
- DOI 10.1109/68.992572, PII S104111350201858X
- N. Tansu and L. J. Mawst, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 14, 444 (2002). 10.1109/68.992572 (Pubitemid 34491603)
- (2002) IEEE Photonics Technology Letters , vol.14 , Issue.4 , pp. 444-446
- Tansu, N.¹ Mawst, L.J.²

12
- 0142057327
- APPLAB 0003-6951,. 10.1063/1.1613998
- N. Tansu and L. J. Mawst, Appl. Phys. Lett. APPLAB 0003-6951 83, 2512 (2003). 10.1063/1.1613998
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2512
- Tansu, N.¹ Mawst, L.J.²

13
- 0142090008
- APPLAB 0003-6951,. 10.1063/1.1611279
- N. Tansu and L. J. Mawst, Appl. Phys. Lett. APPLAB 0003-6951 83, 2112 (2003). 10.1063/1.1611279
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2112
- Tansu, N.¹ Mawst, L.J.²

14
- 3743132816
- APPLAB 0003-6951,. 10.1063/1.110014
- B. Zhao, T. R. Chen, A. Shakouri, and A. Yariv, Appl. Phys. Lett. APPLAB 0003-6951 63, 432 (1993). 10.1063/1.110014
- (1993) Appl. Phys. Lett. , vol.63 , pp. 432
- Zhao, B.¹ Chen, T.R.² Shakouri, A.³ Yariv, A.⁴

15
- 48949104914
- IJSQEN 1077-260X,. 10.1109/JSTQE.2008.918105
- L. J. Mawst, J. Y.-T. Huang, D. P. Xu, J. -Y. Yeh, G. Tsvid, T. F. Kuech, and N. Tansu, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 14, 979 (2008). 10.1109/JSTQE.2008.918105
- (2008) IEEE J. Sel. Top. Quantum Electron. , vol.14 , pp. 979
- Mawst, L.J.¹ Huang, J.Y.-T.² Xu, D.P.³ Yeh, J.-Y.⁴ Tsvid, G.⁵ Kuech, T.F.⁶ Tansu, N.⁷

16
- 0029388955
- APPLAB 0003-6951,. 10.1063/1.114321
- M. Peter, K. Winkler, M. Maier, N. Herres, J. Wagner, D. Fekete, K. H. Bachem, and D. Richards, Appl. Phys. Lett. APPLAB 0003-6951 67, 2639 (1995). 10.1063/1.114321
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2639
- Peter, M.¹ Winkler, K.² Maier, M.³ Herres, N.⁴ Wagner, J.⁵ Fekete, D.⁶ Bachem, K.H.⁷ Richards, D.⁸

17
- 68349131544
- APPLAB 0003-6951,. 10.1063/1.3193663
- A. Albo, C. Cytermann, G. Bahir, and D. Fekete, Appl. Phys. Lett. APPLAB 0003-6951 95, 051102 (2009). 10.1063/1.3193663
- (2009) Appl. Phys. Lett. , vol.95 , pp. 051102
- Albo, A.¹ Cytermann, C.² Bahir, G.³ Fekete, D.⁴

18
- 0032164396
- IEJQA7 0018-9197,. 10.1109/3.709585
- O. Buchinsky, M. Blumin, M. Orenstein, G. Eisenstein, and D. Fekete, IEEE J. Quantum Electron. IEJQA7 0018-9197 34, 1690 (1998). 10.1109/3.709585
- (1998) IEEE J. Quantum Electron. , vol.34 , pp. 1690
- Buchinsky, O.¹ Blumin, M.² Orenstein, M.³ Eisenstein, G.⁴ Fekete, D.⁵

19
- 62149131326
- APPLAB 0003-6951,. 10.1063/1.3089868
- A. Albo, D. Fekete, and G. Bahir, Appl. Phys. Lett. APPLAB 0003-6951 94, 093503 (2009). 10.1063/1.3089868
- (2009) Appl. Phys. Lett. , vol.94 , pp. 093503
- Albo, A.¹ Fekete, D.² Bahir, G.³

20
- 77951199019
- APPLAB 0003-6951,. 10.1063/1.3360216
- A. Albo, C. Cytermann, G. Bahir, and D. Fekete, Appl. Phys. Lett. APPLAB 0003-6951 96, 141102 (2010). 10.1063/1.3360216
- (2010) Appl. Phys. Lett. , vol.96 , pp. 141102
- Albo, A.¹ Cytermann, C.² Bahir, G.³ Fekete, D.⁴

21
- 0039368904
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.50.18147
- J. R. Botha and A. W. R. Leitch, Phys. Rev. B PLRBAQ 0556-2805 50, 18147 (1994). 10.1103/PhysRevB.50.18147
- (1994) Phys. Rev. B , vol.50 , pp. 18147
- Botha, J.R.¹ Leitch, A.W.R.²

22
- 0036662191
- A quantitative study of radiative, auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
- DOI 10.1109/JSTQE.2002.801684
- R. Fehse, S. Tomic, A. R. Adams, S. J. Sweeney, E. P. O'Reilly, A. Andreev, and H. Riechert, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 8, 801 (2002). 10.1109/JSTQE.2002.801684 (Pubitemid 35327630)
- (2002) IEEE Journal on Selected Topics in Quantum Electronics , vol.8 , Issue.4 , pp. 801-810
- Fehse, R.¹ Tomic, S.² Adams, A.R.³ Sweeney, S.J.⁴ O'Reilly, E.P.⁵ Andreev, A.⁶ Riechert, H.⁷

23
- 0000661913
- JAPNDE 0021-4922,. 10.1143/JJAP.39.1730
- M. Irikawa, T. Ishikawa, T. Fukushima, H. Shimizu, A. Kasukawa, and J. Iga, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 39, 1730 (2000). 10.1143/JJAP.39.1730
- (2000) Jpn. J. Appl. Phys., Part 1 , vol.39 , pp. 1730
- Irikawa, M.¹ Ishikawa, T.² Fukushima, T.³ Shimizu, H.⁴ Kasukawa, A.⁵ Iga, J.⁶

24
- 0346955939
- JCRGAE 0022-0248
- J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth JCRGAE 0022-0248 27, 118 (1974).
- (1974) J. Cryst. Growth , vol.27 , pp. 118
- Matthews, J.W.¹ Blakeslee, A.E.²

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