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Volumn 96, Issue 14, 2010, Pages

Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications

(4) Albo, Asaf a Cytermann, Catherine a Bahir, Gad a Fekete, Dan a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC DISTRIBUTION; EFFECTIVE DIFFUSION; GROWTH DIRECTIONS; HIGH QUALITY; INTERFACE ADSORPTION; INTERFACIAL LAYER; METAL-ORGANIC CHEMICAL VAPOR EPITAXIES; METALORGANIC CHEMICAL VAPOR DEPOSITION; N INCORPORATION; NEAR-INFRARED APPLICATIONS; NITROGEN ATOM; NONLINEAR DEPENDENCE; QUANTUM WELL; SINGLE QUANTUM WELL; STRAIN GRADIENT EFFECTS; SURFACE KINETICS; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY;

CRYSTAL GROWTH; GAS ADSORPTION; GROWTH KINETICS; INDUSTRIAL CHEMICALS; INFRARED DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77951199019 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3360216 Document Type: Article

Times cited : (16)

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