Improved theory for carrier leakage and diffusion in multiquantum-well semiconductor lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 A, 2000, Pages 1730-1737

  Irikawa, Michinori ^a   Ishikawa, Takuya ^a   Fukushima, Toru ^a   Shimizu, Hitoshi ^a   Kasukawa, Akihiko ^a   Iga, Kenichi ^b  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Auger carrier loss; Carrier leakage; Semiconductor laser; Strained quantum well; Temperature sensitivity

Indexed keywords

EID: 0000661913     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1730     Document Type: Article

References (6)

1. A. R. Adams: Electron. Lett. 2 (1986) 249.
2. E. Yablonovitch and O. Kane: J. Lightwave Technol. 4 (1986) 504.
3. P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. I. M. Binsma and T. V. Dongen: IEEE J. Quantum Electron. 27 (1991) 1426.
4. A. Kasukawa, T. Namegaya, N. Iwai, N. Yamanaka, Y. Ikegami and N. Tsukiji: IEEE Photon. Technol. Lett. 1 (1994) 4.
5. I. Suemune: IEEE J. Quantum Electron. 27 (1991) 1149.
6. M. C. Tatham, C. P. Seltzer, S. D. Perrin and D. M. Cooper: Electron. Lett. 27 (1991) 1278.