Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition

Applied Physics Letters

Volumn 95, Issue 5, 2009, Pages

  Albo, Asaf ^a   Cytermann, Catherine ^a   Bahir, Gad ^a   Fekete, Dan ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; HIGH QUALITY; HIGHLY STRAINED; METALORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN ATOM; NITROGEN INCORPORATION; QUANTUM WELL; SECONDARY ION MASS SPECTROSCOPY; SHORT-PERIOD SUPERLATTICES;

ATOMIC LAYER EPITAXY; ATOMS; CRYSTAL GROWTH; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; NITROGEN; OPTICAL COMMUNICATION; ORGANIC CHEMICALS; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; VAPORS;

VAPOR DEPOSITION;

EID: 68349131544     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3193663     Document Type: Article

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