High-temperature failure of GaN LEDs related with passivation

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 405-411

  Meneghini, Matteo ^a   Trevisanello, Lorenzo ^a   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a   Rossi, Francesca ^b   Pavesi, Maura ^c   Zehnder, Ulrich ^d   Strauss, Uwe ^d  

^a UNIVERSITY OF PADOVA   (Italy)

^b IMEM CNR   (Italy)

^c UNIVERSITY OF PARMA   (Italy)

^d OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Degradation; Gallium nitride; Hydrogen; Passivation

Indexed keywords

CATHODOLUMINESCENCE; DEGRADATION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HYDROGEN; PASSIVATION; THERMAL STRESS;

DEGRADATION PROCESS; EMISSION DISTRIBUTION; PASSIVATION DEPOSITION;

LIGHT EMITTING DIODES;

EID: 33845273832     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.028     Document Type: Article

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