Transport properties of monolayer and bilayer graphene p-n junctions with charge puddles in the quantum Hall regime

Journal of Physics Condensed Matter

Volumn 22, Issue 46, 2010, Pages

  Cheng, Shu Guang ^a  

^a NORTHWEST UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSONS; BI-LAYER; CHARGE DISORDER; CONDUCTANCE DISTRIBUTION; DISORDER STRENGTH; ELECTRON HOLE; INHOMOGENEITIES; NON-EQUILIBRIUM GREEN FUNCTIONS; P-N JUNCTION; QUANTIZED CONDUCTANCE; QUANTUM HALL REGIME; SMALL CHARGES; UNIVERSAL CONDUCTANCE FLUCTUATIONS;

GRAPHENE; HALL EFFECT DEVICES; MONOLAYERS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; TRANSPORT PROPERTIES;

SEMICONDUCTOR JUNCTIONS;

EID: 78149454842     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/46/465301     Document Type: Article

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