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Physical Review Letters

Volumn 101, Issue 16, 2008, Pages

Disorder-induced enhancement of transport through graphene p-n junctions

(3) Long, Wen a Sun, Qing Feng b Wang, Jian c

a CAPITAL NORMAL UNIVERSITY (China)

b INSTITUTE OF PHYSICS (China)

c UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC FIELDS;

DISORDER STRENGTHS; ELECTRON TRANSPORTS; GRAPHENE; IDEAL VALUES; LANDAUER; NONEQUILIBRIUM GREEN FUNCTION METHODS; NUMERICAL RESULTS; P-N JUNCTIONS; PERPENDICULAR MAGNETIC FIELDS; PLATEAU STRUCTURES; SYSTEM PARAMETERS;

SEMICONDUCTOR JUNCTIONS;

EID: 54849422855 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.101.166806 Document Type: Article

Times cited : (168)

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