Simulation of spin field effect transistors: Effects of tunneling and spin relaxation on performance

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

  Gao, Yunfei ^a   Low, Tony ^a   Lundstrom, Mark S ^a   Nikonov, Dmitri E ^b  

^a Purdue University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NUMERICAL SIMULATION; PERFORMANCE LIMITS; QUANTUM TRANSPORT; SPIN FIELD-EFFECT TRANSISTORS; SPIN RELAXATION; SPIN SCATTERING; TUNNELING BARRIER;

COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRON MULTIPLIERS; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 78149452586     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3496666     Document Type: Article

References (47)

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors, Chapter, "Emerging research devices," 2009, http://public.itrs.net/
2. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science SCIEAS 0036-8075 294, 1488 (2001). 10.1126/science.1065389
3. A. Fert, Rev. Mod. Phys. RMPHAT 0034-6861 80, 1517 (2008). 10.1103/RevModPhys.80.1517
4. I. Žutić, J. Fabian, and S. D. Sarma, Rev. Mod. Phys. RMPHAT 0034-6861 76, 323 (2004). 10.1103/RevModPhys.76.323
5. M. N. Baibich, J. M. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Etienne, G. Creuzet, A. Friederich, and J. Chazelas, Phys. Rev. Lett. PRLTAO 0031-9007 61, 2472 (1988). 10.1103/PhysRevLett.61.2472
6. G. Binasch, P. Grünberg, F. Saurenbach, and W. Zinn, Phys. Rev. B PLRBAQ 0556-2805 39, 4828 (1989). 10.1103/PhysRevB.39.4828
7. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Sament, and S. Yang, Nature Mater. NMAACR 1476-1122 3, 862 (2004). 10.1038/nmat1256
8. E. B. Myers, D. C. Ralph, J. A. Katine, R. N. Louie, and R. A. Buhrman, Science SCIEAS 0036-8075 285, 867 (1999). 10.1126/science.285.5429.867
9. S. Sugahara and M. Tanaka, Appl. Phys. Lett. APPLAB 0003-6951 84, 2307 (2004). 10.1063/1.1689403
10. B. Huang, D. J. Monsma, and I. Appelbaum, Phys. Rev. Lett. PRLTAO 0031-9007 99, 177209 (2007). 10.1103/PhysRevLett.99.177209
11. S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, and R. E. Scheuerlein, J. Appl. Phys. JAPIAU 0021-8979 85, 5828 (1999). 10.1063/1.369932
12. S. Datta and B. Das, Appl. Phys. Lett. APPLAB 0003-6951 56, 665 (1990). 10.1063/1.102730
13. R. A. de Groot, F. M. Mueler, P. G. van Eugen, and K. H. J. Buschow, Phys. Rev. Lett. PRLTAO 0031-9007 50, 2024 (1983). 10.1103/PhysRevLett.50.2024
14. R. B. Mancoff, B. M. Clemens, E. J. Singley, and D. N. Basov, Phys. Rev. B PLRBAQ 0556-2805 60, R12565 (1999). 10.1103/PhysRevB.60.R12565
15. K. Inomata, N. Ikeda, N. Tezuka, R. Goto, S. Sugimoto, M. Wojcik, and E. Jedryka, Sci. Technol. Adv. Mater. STAMCV 1468-6996 9, 014101 (2008). 10.1088/1468-6996/9/1/014101
16. M. Tanaka and S. Sugahara, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 961 (2007). 10.1109/TED.2007.894375
17. C. T. Tanaka, J. Nowak, and J. S. Moodera, J. Appl. Phys. JAPIAU 0021-8979 86, 6239 (1999). 10.1063/1.371678
18. G. A. de Wijs and R. A. de Groot, Phys. Rev. B PLRBAQ 0556-2805 64, 020402 (2001). 10.1103/PhysRevB.64.020402
19. T. Low, M. S. Lundstrom, and D. E. Nikonov, J. Appl. Phys. JAPIAU 0021-8979 104, 094511 (2008). 10.1063/1.3013438
20. G. Schmidt, D. Ferrand, and L. W. Molenkamp, Phys. Rev. B PRBMDO 0163-1829 62, R4790 (2000). 10.1103/PhysRevB.62.R4790
21. E. I. Rashba, Phys. Rev. B PLRBAQ 0556-2805 62, R16267 (2000). 10.1103/PhysRevB.62.R16267
22. A. Fert and H. Jaffr̀s, Phys. Rev. B PLRBAQ 0556-2805 64, 184420 (2001). 10.1103/PhysRevB.64.184420
23. H. C. Koo, H. Yi, J. -B. Ko, J. Chang, S. -H. Han, D. Jung, S. -G. Huh, and J. Eom, Appl. Phys. Lett. APPLAB 0003-6951 90, 022101 (2007). 10.1063/1.2430688
24. X. Lou, C. Adelmann, S. A. Crooker, E. S. Garlidi, J. Zhang, K. S. Madhukar Reddy, S. D. Flexner, C. J. Palmstrøm, and P. A. Crowell, Nat. Phys. ZZZZZZ 1745-2473 3, 197 (2007). 10.1038/nphys543
25. W. Van Roy, P. Van Dorpe, R. Vanheertum, P. -J. Vandormael, and G. Borghs, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 933 (2007). 10.1109/TED.2007.894365
26. B. -C. Min, K. Motohashi, C. Lodder, and R. Jansen, Nature Mater. NMAACR 1476-1122 5, 817 (2006). 10.1038/nmat1736
27. Y. Zhou, M. Ogawa, M. Bao, W. Han, R. K. Kawakami, and K. Wang, Appl. Phys. Lett. APPLAB 0003-6951 94, 242104 (2009). 10.1063/1.3157128
28. T. Marukame, T. Inokuchi, M. Ishikawa, H. Sugiyama, and Y. Saito, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 09-2.
29. A. M. Bratkovsky, Rep. Prog. Phys. RPPHAG 0034-4885 71, 026502 (2008). 10.1088/0034-4885/71/2/026502
30. I. Zutić, J. Fabian, and S. C. Erwin, IBM J. Res. Dev. IBMJAE 0018-8646 50, 121 (2006). 10.1147/rd.501.0121
31. S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, Cambridge, 2005).
32. A. A. Yanik, G. Klimeck, and S. Datta, Phys. Rev. B PLRBAQ 0556-2805 76, 045213 (2007). 10.1103/PhysRevB.76.045213
33. S. Salahuddin, D. Datta, P. Srivastava, and S. Datta, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 121.
34. X. -G. Zhang and W. H. Butler, Phys. Rev. B PLRBAQ 0556-2805 70, 172407 (2004). 10.1103/PhysRevB.70.172407
35. D. Waldron, L. Liu, and H. Guo, Nanotechnology NNOTER 0957-4484 18, 424026 (2007). 10.1088/0957-4484/18/42/424026
36. Z. Ren, S. Goasguen, A. Matsudaira, S. S. Ahmed, K. Cantley, and M. Lundstrom, nanoMOS, 2006. Available online at: https://www.nanohub.org/tools/ nanomos/
37. M. P. Anantram, M. S. Lundstrom, and D. E. Nikonov, Proc. IEEE IEEPAD 0018-9219 96, 1511 (2008). 10.1109/JPROC.2008.927355
38. D. E. Nikonov, G. I. Bourianoff, and P. A. Gargini, http://nanohub.org/ resources/7772
39. K. Sugiura, R. Nakane, S. Sugahara, and M. Tanaka, Appl. Phys. Lett. APPLAB 0003-6951 89, 072110 (2006). 10.1063/1.2337562
40. D. Lee, S. Raghunathan, R. J. Wilson, D. E. Nikonov, K. Saraswat, and S. X. Wang, Appl. Phys. Lett. APPLAB 0003-6951 96, 052514 (2010). 10.1063/1.3285163
41. Y. Zhou, W. Han, Y. Wang, F. Xiu, J. Zou, R. K. Kawakami, and K. L. Wang, Appl. Phys. Lett. APPLAB 0003-6951 96, 102103 (2010). 10.1063/1.3357423
42. W. H. Butler and A. Gupta, Nature Mater. NMAACR 1476-1122 3, 845 (2004). 10.1038/nmat1272
43. W. H. Butler, X. -G. Zhang, T. C. Schulthess, and M. J. MacLaren, Phys. Rev. B PLRBAQ 0556-2805 63, 054416 (2001). 10.1103/PhysRevB.63.054416
44. S. Datta, Proceedings of the International School of Physics "Enrico Fermi" Course CLX edited by, A. D'Amico, G. Balestrino, and, A. Paoletti, (IOS Press, Amsterdam and SIF Bologna, 2005), p. 244.
45. J. S. Tsay, C. S. Yang, Y. Liou, and Y. D. Yao, J. Appl. Phys. JAPIAU 0021-8979 85, 4967 (1999). 10.1063/1.370060
46. D. Saha, L. Siddiqui, P. Bhattacharya, S. Datta, D. Basu, and M. Holub, Phys. Rev. Lett. PRLTAO 0031-9007 100, 196603 (2008). 10.1103/PhysRevLett.100. 196603
47. B. Huang, L. Zhao, D. J. Monsma, and I. Appelbaum, Appl. Phys. Lett. APPLAB 0003-6951 91, 052501 (2007). 10.1063/1.2767198