Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

Review of Scientific Instruments

Volumn 81, Issue 10, 2010, Pages

  Oh, Changhoon ^a   Ryoo, Hoonchul ^a   Lee, Hyungwoo ^a   Kim, Se Yeon ^b   Yi, Hun Jung ^b   Hahn, Jae W ^a  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY UNIFORMITY; ETCH RATES; FLUORINE RADICAL; INDUCTIVELY-COUPLED; OPTICAL EMISSION SPECTROMETER; SEMICONDUCTOR PROCESS; SPATIAL RESOLUTION; SPATIAL VARIATIONS; SPATIALLY RESOLVED OPTICAL EMISSION;

ELECTROMAGNETIC INDUCTION; FLUORINE; IMAGE RESOLUTION; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; PLASMA DENSITY; SILICON OXIDES; SILICON WAFERS; SPECTROMETERS; SPECTROMETRY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78149447893     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3488104     Document Type: Conference Paper

References (21)

1. The latest edition of the ITRS can be found at http://public.itrs.net/.
2. P. Ho, Justine E. Johannes, R. J. Buss, and E. Meeks, J. Vac. Sci. Technol. A JVTAD6 0734-2101 19, 2344 (2001). 10.1116/1.1387048
3. H. Kobayashi, K. Yokogawa, K. Maeda, T. Kanekiyo, and M. Izawa, Thin Solid Films THSFAP 0040-6090 515, 4937 (2007). 10.1016/j.tsf.2006.10.047
4. T. Kim, S. J. Ullal, V. Vahedi, and E. S. Aydil, Rev. Sci. Instrum. RSINAK 0034-6748 73, 2494 (2002).
5. M. J. Buie, J. T. Pender, J. Soniker, M. L. Brake, and M. Elta, J. Vac. Sci. Technol. A JVTAD6 0734-2101 13, 1930 (1995). 10.1116/1.579632
6. T. W. Kim and E. S. Aydil, J. Electrochem. Soc. JESOAN 0013-4651 150, G418 (2003). 10.1149/1.1578481
7. A. Agarwal and M. J. Kushner, J. Vac. Sci. Technol. A JVTAD6 0734-2101 26, 498 (2008). 10.1116/1.2909966
8. S. Yun and G. R. Tynan, J. Appl. Phys. JAPIAU 0021-8979 89, 911 (2001). 10.1063/1.1335620
9. M. V. Malyshev, N. C. M. Fuller, K. H. A. Bogart, V. M. Donnelly, and I. P. Herman, Appl. Phys. Lett. APPLAB 0003-6951 74, 1666 (1999). 10.1063/1.123648
10. J. P. Booth, G. Hancock, N. D. Perry, and M. J. Toogood, J. Appl. Phys. JAPIAU 0021-8979 66, 5251 (1989). 10.1063/1.343712
11. K. Maruyama, A. Sakai, and T. Goto, J. Phys. D JPAPBE 0022-3727 26, 199 (1993). 10.1088/0022-3727/26/2/005
12. D. J. Economou, S. -K. Park, and G. D. Williams, J. Electrochem. Soc. JESOAN 0013-4651 136, 188 (1989). 10.1149/1.2096584
13. E. S. Aydil and D. J. Economou, J. Electrochem. Soc. JESOAN 0013-4651 139, 1406 (1992). 10.1149/1.2069420
14. P. Tomassini and A. Giulietti, Opt. Commun. OPCOB8 0030-4018 199, 143 (2001). 10.1016/S0030-4018(01)01575-9
15. M. Sarfaty, M. Harper, and N. Hershkowitz, Rev. Sci. Instrum. RSINAK 0034-6748 69, 3176 (1998). 10.1063/1.1149080
16. L. Gu and M. A. Lieberman, J. Vac. Sci. Technol. A JVTAD6 0734-2101 6, 2960 (1988). 10.1116/1.575460
17. D. Sung, S. Jeong, Y. Park, V. N. Volynets, A. G. Ushakov, and G. H. Kim, J. Vac. Sci. Technol. A JVTAD6 0734-2101 27, 13 (2008). 10.1116/1.3010717
18. J. W. Coburn and M. Chen, J. Appl. Phys. JAPIAU 0021-8979 51, 3134 (1980). 10.1063/1.328060
19. R. A. Gottscho and V. M. Donelly, J. Appl. Phys. JAPIAU 0021-8979 56, 245 (1984). 10.1063/1.333954
20. A. D. Tserepi and T. A. Miller, J. Appl. Phys. JAPIAU 0021-8979 77, 505 (1995). 10.1063/1.359032
21. S. Shannon, J. P. Holloway, and M. L. Brake, J. Vac. Sci. Technol. A JVTAD6 0734-2101 17, 2703 (1999). 10.1116/1.581933