Effects of radical-distribution control on etching-profile uniformity in dielectric etching

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 4937-4940

  Kobayashi, Hiroyuki ^a   Yokogawa, Ken'etsu ^a   Maeda, Kenji ^a   Kanekiyo, Tadamitsu ^b   Izawa, Masaru ^a  

^a HITACHI LTD   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

Damascene; Dielectrics; Etching; UHF ECR plasma

Indexed keywords

COMPUTER SIMULATION; ETCHING; FLOW OF FLUIDS; MAGNETIC FIELD EFFECTS; NITROGEN;

GAS-INJECTION SYSTEMS; RADICAL-DISTRIBUTION CONTROL; UHF-ECR PLASMA;

SILICON WAFERS;

EID: 33947177553     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.047     Document Type: Article

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