High work function (p-type NiO1+x)/Zn0.95Ga 0.05O heterostructures for transparent conducting oxides

Journal of Physics D: Applied Physics

Volumn 43, Issue 10, 2010, Pages

  Dutta, Titas ^a   Gupta, Pranav ^a   Gupta, Alok ^a   Narayan, Jagdish ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER FILMS; CRYSTALLINE QUALITY; DEVICE EFFICIENCY; ELECTRICAL AND OPTICAL PROPERTIES; GLASS SUBSTRATES; HETEROSTRUCTURES; HIGH WORK FUNCTION; HOLE INJECTION; LOW RESISTIVITY; MULTIPLE OXIDATION; OPTICAL TRANSPARENCY; OVERLAYERS; P-TYPE CONDUCTIVITY; P-TYPE NIO; PREFERRED ORIENTATIONS; SURFACE WORK FUNCTIONS; THICKNESS VARIATION; TRANSPARENT CONDUCTING OXIDE; TRANSPARENT ELECTRODE;

EPITAXIAL FILMS; GALLIUM; HETEROJUNCTIONS; MAGNETIC FILMS; OPTICAL PROPERTIES; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PULSED LASER DEPOSITION; PULSED LASERS; SOLID STATE DEVICES; SULFUR COMPOUNDS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; WORK FUNCTION; X RAY DIFFRACTION ANALYSIS; ZINC;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77649194174     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/10/105301     Document Type: Article

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