Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs)

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1973-1979

  McMorrow, Dale ^a   Magno, Richard ^a   Bracker, Allan S ^a   Bennett, Brian R ^a   Buchner, Stephen ^a,b   Melinger, Joseph S ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

Author keywords

Charge collection; High electron mobility transistor (HEMT); Monostable bistable transition logic element (MOBILE); Resonant interband tunneling diode (RITD); Resonant tunneling diode (RTD); Single event effects (SEEs); Single event upset (SEU); Transient band bending

Indexed keywords

ELECTRIC CHARGE; HIGH ELECTRON MOBILITY TRANSISTORS; IONIZING RADIATION; PULSED LASER APPLICATIONS; RADIATION EFFECTS; RESONANT TUNNELING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSIENTS;

SINGLE EVENT EFFECTS (SEE);

SEMICONDUCTOR DIODES;

EID: 0035722204     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983159     Document Type: Conference Paper

References (15)

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2. RTD/HFET low standby power SRAM gain cell
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4. Modeling of ultra-low-power AlSb/InAs HEMT-RITD circuits
5. Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
6. Charge-collection characteristics of low-power, ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMT's)
7. Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes
8. Theory of electronic and optical properties of bulk AlSb and InAs and InAs/AlSb superlattices
9. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
10. Dependence of the direct and indirect gap of AlSb on hydrostatic pressure
11. The dielectric function of AlSb from 1.4 to 5.8 eV determined by spectroscopic ellipsometry
12. Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers
13. The effect of defects on InAs/AlSb/GaSb resonant interband tunneling diodes
14. Optical switching of resonant interband tunneling diodes induced by heavy hole space charge effects