Melt growth of striation and etch pit free GaSb under microgravity

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 96-100

  Nishinaga, T ^a   Ge, P ^b   Huo, C ^b   He, J ^a   Nakamura, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Dislocation; Etch pit density; GaSb; Gradient freeze method; Impurity striations; Microgravity

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ETCHING; MICROGRAVITY PROCESSING; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TELLURIUM;

GRADIENT FREEZE METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031547373     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01084-6     Document Type: Article

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