Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7222, Issue , 2009, Pages

  Huang, E K ^a   Nguyen, B M ^a   Hoffman, D ^a   Delaunay, P Y ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

Dry etching; Focal plane arrays; InAs GaSb; Inductively coupled plasma; Infrared; Superlattice; Type II

Indexed keywords

CUT-OFF WAVELENGTHS; DARK CURRENT DENSITIES; DIFFERENTIAL RESISTANCES; ELEMENT ARRAYS; ETCHED STRUCTURES; ETCHING TECHNIQUES; HARD MASKS; HIGH ASPECT RATIO ETCHINGS; HIGH FILLS; INAS/GASB; INAS/GASB SUPERLATTICES; INDUCTIVELY COUPLED PLASMA ETCHINGS; INFRARED; ORDER OF MAGNITUDES; PROCESSING TECHNIQUES; RESISTANCE-AREA PRODUCTS; SINGLE ELEMENTS; THIRD GENERATIONS; TYPE-II; ZERO BIAS;

ASPECT RATIO; CYCLOTRONS; DETECTORS; ELECTRON CYCLOTRON RESONANCE; FOCAL PLANE ARRAYS; FOCUSING; INDUCTIVELY COUPLED PLASMA; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTODETECTORS; PHOTODIODES; PHOTORESISTS; PLASMA ETCHING; PRESSURE DROP; SILICON COMPOUNDS;

DRY ETCHING;

EID: 62449316059     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.810030     Document Type: Conference Paper

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