Impurity doping in SiO2: Formation energies and defect levels from first-principles calculations

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 15, 2010, Pages

  Han, Dong ^a   West, D ^b   Li, Xian Bin ^a   Xie, Sheng Yi ^a   Sun, Hong Bo ^a   Zhang, S B ^a,b  

^a JILIN UNIVERSITY   (China)

^b Rensselaer Polytechnic Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78149269024     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.155132     Document Type: Article

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