Effects of B and N implantation on optical absorption and photoluminescence and comparison to the effects of implanting Si, Ge, O, and Ar in silica

Journal of Non-Crystalline Solids

Volumn 351, Issue 21-23, 2005, Pages 1727-1737

  Weeks, R A ^a   Magruder III, R H ^b   Gaylon, R ^b   Weller, R A ^c  

^a Belmont University Nashville ^*  (United States)

^b BELMONT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CONCENTRATION (PROCESS); ION BOMBARDMENT; LIGHT ABSORPTION; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; SILICA; STOICHIOMETRY;

ELECTRONIC STATES; FULL WIDTH AT HALF MAXIMUM (FWHM); GAUSSIAN FUNCTIONS; PHOTOLUMINESCENCE EXCITATIONS (PLE);

ION IMPLANTATION;

EID: 21144441270     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.04.005     Document Type: Conference Paper

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