Atomic surface structure of Si(1 0 0) substrates prepared in a chemical vapor environment

Applied Surface Science

Volumn 257, Issue 2, 2010, Pages 574-580

  Döscher, Henning ^a   Kleinschmidt, Peter ^a   Hannappel, Thomas ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

CVD; Hydrogen annealing; LEED; Si(1 0 0); Step structure; STM

Indexed keywords

ATOMS; CRYSTAL ATOMIC STRUCTURE; DIMERS; ELECTRONS; ENVIRONMENTAL DESIGN; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACE RECONSTRUCTION; ULTRAHIGH VACUUM;

CHEMICAL VAPOR DEPOSITIONS (CVD); CONTAMINATION-FREE SAMPLES; HYDROGEN ANNEALING; METAL-ORGANIC VAPOR PHASE EPITAXY; PRECURSOR MOLECULES; SI(1 0 0); STEP STRUCTURE; SUBSTRATE MISORIENTATION;

CHEMICAL VAPOR DEPOSITION;

EID: 78049527602     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.07.035     Document Type: Article

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