Silicon surface cleaning for low temperature silicon epitaxial growth

Solid State Phenomena

Volumn 65-66, Issue , 1999, Pages 229-232

  Mayusumi, M ^a   Imai, M ^a   Nakahara, S ^a   Inoue, K ^a   Takahashi, J ^b   Ohmi, T ^b  

^a Super Silicon Crystal Research Institute Corp   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Pre treatment; Protective film; Silicon epitaxial growth

Indexed keywords

HEAT TREATMENT; HYDROGEN; PROTECTIVE COATINGS; SILICON; SURFACE CLEANING; SURFACE ROUGHNESS; TEMPERATURE; EPITAXIAL GROWTH; IMPURITIES; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

CLEAN SURFACES; HYDROGEN ATMOSPHERE; LOW-TEMPERATURE SILICONS; PRE-TREATMENT; SILICON EPITAXIAL GROWTH; SILICON SURFACES; ULTRA PURE WATER; XPS ANALYSIS;

EPITAXIAL GROWTH; SILICON WAFERS;

LOW TEMPERATURE SILICON EPITAXIAL GROWTH; THIN OXIDE PROTECTIVE FILMS;

EID: 0032761450     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.65-66.229     Document Type: Conference Paper

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