Cavity mode-gain peak tradeoff for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C

IEEE Photonics Technology Letters

Volumn 19, Issue 2, 2007, Pages 121-123

  Mircea, A ^a   Caliman, A ^a   Iakovlev, V ^a   Mereuta, A ^a   Suruceanu, G ^a   Berseth, C A ^a   Royo, P ^a   Syrbu, A ^a   Kapon, E ^b  

^a BeamExpress SA   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

Surface emitting lasers; Wafer bonding

Indexed keywords

10 GB/ S; CARRIER INJECTION; CAVITY MODE; FALL TIME; GAIN PEAKS; HIGH TEMPERATURE PERFORMANCE; INALGAAS; INP; MODULATION BANDWIDTH; MODULATION SPEED; OPEN EYE DIAGRAMS; OUTPUT POWER; PHOTOLUMINESCENCE PEAK; RED SHIFT; ROOM TEMPERATURE; SINGLE MODE; SINGLE MODE EMISSION; VERTICAL-CAVITY SURFACE EMITTING LASER;

LASERS; MODULATION; SURFACE EMITTING LASERS; TUNNEL JUNCTIONS;

WAFER BONDING;

EID: 48949100495     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.890081     Document Type: Article

References (9)

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