A novel enhanced electric-field impact-ionization MOS transistor

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1175-1177

  Sarkar, Deblina ^a   Singh, Navab ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Band to band tunneling; breakdown voltage; I MOS; impact ionization; subthreshold slope

Indexed keywords

BAND TO BAND TUNNELING; BREAKDOWN VOLTAGE; DEVICE RELIABILITY; DIELECTRIC REGIONS; HOT CARRIER GENERATION; I-MOS; IMPACT IONIZATION MOS; MOS STRUCTURE; OFF-STATE LEAKAGE; ON CURRENTS; POWER CONSUMPTION; ROOM TEMPERATURE; SUBTHRESHOLD SLOPE; SUBTHRESHOLD SWING;

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATE DIELECTRICS; GATES (TRANSISTOR); PARTICLE DETECTORS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

IMPACT IONIZATION;

EID: 78049268981     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2066541     Document Type: Article

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