A novel biasing scheme for I-MOS (impact-ionization MOS) devices

IEEE Transactions on Nanotechnology

Volumn 4, Issue 3, 2005, Pages 322-325

  Choi, Woo Young ^a   Song, Jae Young ^a   Lee, Jong Duk ^a   Park, Young June ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

Avalanche breakdown; Drain induced current enhancement (DICE); Impact ionization metal oxide semiconductor (I MOS); Novel biasing scheme; Subthreshold swing

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; IMPACT IONIZATION; INDUCED CURRENTS; LOGIC GATES; PROBLEM SOLVING; THICKNESS MEASUREMENT;

AVALANCHE; BIASING SCHEME; BREAKDOWN; DRAIN INDUCED CURRENT ENHANCEMENT (DICE); SUBTHRESHOLD SWING;

MOS DEVICES;

EID: 20244390621     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.847001     Document Type: Conference Paper

References (5)

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