100-nm n-/p-Channel I-MOS using a novel self-aligned structure

IEEE Electron Device Letters

Volumn 26, Issue 4, 2005, Pages 261-263

  Choi, Woo Young ^a   Song, Jae Young ^a   Lee, Jong Duk ^a   Park, Young June ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

I MOS; Self alignment; Subthreshold swing

Indexed keywords

GATES (TRANSISTOR); IMPACT IONIZATION; INTEGRATED CIRCUIT MANUFACTURE; MASKS; PHOTOLITHOGRAPHY; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

IMPACT-IONIZATION MOS (I-MOS); SELF-ALIGNMENT STRUCTURE; SILICON SUBSTRATE; SUBTHRESHOLD SWING;

MOS DEVICES;

EID: 17644400518     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.844695     Document Type: Article

References (7)

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