Breakdown voltage reduction in I-MOS devices

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Volumn 1, Issue , 2006, Pages 380-381

  Choi, Woo Young ^a   Song, Jae Young ^a   Kim, Jong Pil ^a   Kim, Sang Wan ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a  

^a Seoul National University

Author keywords

Breakdown voltage; I MOS

Indexed keywords

BREAK DOWN VOLTAGES; BREAKDOWN VOLTAGE; DEVICE PARAMETERS; I-MOS; IMPACT-IONIZATION MOS; SCALING-DOWN; SIMULATION RESULTS;

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; IMPACT IONIZATION; IONIZATION OF GASES; NANOTECHNOLOGY; TECHNOLOGY;

MOS DEVICES;

EID: 50249112606     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2006.4388776     Document Type: Conference Paper

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