Enhancement-mode pseudomorphic In0.22Ga0.78As-Channel MOSFETs with ultrathin inalp native oxide gate dielectric and a cutoff frequency of 60 GHz

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1214-1216

  Xing, Xiu ^a   Fay, Patrick J ^a  

^a University of Notre Dame   (United States)

Author keywords

InAlP native oxide; InGaAs channel MOSFET; self aligned fabrication processing

Indexed keywords

ENHANCEMENT MODES; ENHANCEMENT-MODE; EPITAXIAL STRUCTURE; GATE LEAKAGES; GATE LENGTH; HIGH CURRENT GAIN; INTRINSIC TRANSCONDUCTANCE; MOS-FET; MOSFETS; NATIVE OXIDES; OXIDE GATE DIELECTRICS; POWER SUPPLY; RF APPLICATIONS; SATURATION DRAIN CURRENT DENSITY; SELF-ALIGNED; THICK OXIDES; ULTRA-THIN; WET THERMAL OXIDATIONS;

DRAIN CURRENT; ELECTRIC POWER SUPPLIES TO APPARATUS; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING INDIUM;

CUTOFF FREQUENCY;

EID: 77958578677     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2068034     Document Type: Article

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