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Thin Solid Films

Volumn 519, Issue 2, 2010, Pages 619-624

Improved thermoelectric performance of highly-oriented nanocrystalline bismuth antimony telluride thin films

(3) Takashiri, Masayuki a Tanaka, Saburo b Miyazaki, Koji b

a KOMATSU LTD (Japan)

b KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Bismuth antimony telluride; Crystal orientation; Nanocrystalline thin films; Thermoelectric

Indexed keywords

ANISOTROPIC FACTOR; ANNEALING CONDITION; AVERAGE GRAIN SIZE; BISMUTH ANTIMONY TELLURIDE; BULK ALLOYS; ELECTRICAL CONDUCTIVITY; FIGURE OF MERIT; FLASH EVAPORATION; IN-PLANE; NANOCRYSTALLINE THIN FILMS; NANOCRYSTALLINES; NANOSIZED GRAINS; POWER FACTORS; ROOM TEMPERATURE; THERMOELECTRIC; THERMOELECTRIC PERFORMANCE;

ANTIMONY; BISMUTH; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; NANOCRYSTALLINE ALLOYS; SINGLE CRYSTALS; THERMAL CONDUCTIVITY; THERMOANALYSIS; THIN FILMS; VAPOR DEPOSITION;

THERMAL CONDUCTIVITY OF SOLIDS;

EID: 77958497832 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.08.013 Document Type: Article

Times cited : (62)

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