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Volumn 103, Issue 1-2, 2004, Pages 252-259

Miniaturization of thermoelectric hydrogen sensor prepared on glass substrate with low-temperature crystallized SiGe film

Author keywords

Glass substrate; Hydrogen sensor; Polycrystalline SiGe film; Thermoelectric effect

Indexed keywords

CATALYSIS; CATALYSTS; CHEMICAL SENSORS; CRYSTALLIZATION; GLASS; SCANNING ELECTRON MICROSCOPY; SINTERING; THERMOELECTRICITY; X RAY DIFFRACTION ANALYSIS;

EID: 4444347789     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2004.04.057     Document Type: Conference Paper
Times cited : (20)

References (13)
  • 1
    • 0038608208 scopus 로고    scopus 로고
    • Hydrogen sensor based on rf-sputtered thermoelectric SiGe film
    • Qiu F., Shin W., Matsumiya M., Izu N., Murayama N. Hydrogen sensor based on rf-sputtered thermoelectric SiGe film. Jpn. J. Appl. Phys. 42:2003;1563-1567
    • (2003) Jpn. J. Appl. Phys , vol.42 , pp. 1563-1567
    • Qiu, F.1    Shin, W.2    Matsumiya, M.3    Izu, N.4    Murayama, N.5
  • 2
    • 0043199372 scopus 로고    scopus 로고
    • Investigation of thermoelectric hydrogen sensor based on SiGe film
    • Qiu F., Shin W., Matsumiya M., Izu N., Murayama N. Investigation of thermoelectric hydrogen sensor based on SiGe film. Sens. Actuators, B. 94:2003;152-160
    • (2003) Sens. Actuators, B , vol.94 , pp. 152-160
    • Qiu, F.1    Shin, W.2    Matsumiya, M.3    Izu, N.4    Murayama, N.5
  • 5
    • 0036717862 scopus 로고    scopus 로고
    • Lead telluride as a thermoelectric material for thermoelectric power generation
    • Dughaish Z.H. Lead telluride as a thermoelectric material for thermoelectric power generation. Physica B. 322:2002;205-223
    • (2002) Physica B , vol.322 , pp. 205-223
    • Dughaish, Z.H.1
  • 7
    • 0026840184 scopus 로고
    • Properties of thin film thermoelectric materials: Application to sensors using the Seebeck effect
    • Boyer A., Cissé E. Properties of thin film thermoelectric materials: application to sensors using the Seebeck effect. Mater. Sci. Eng., B. 13:1992;103-111
    • (1992) Mater. Sci. Eng., B , vol.13 , pp. 103-111
    • Boyer, A.1    Cissé, E.2
  • 9
    • 0036869715 scopus 로고    scopus 로고
    • Li and Na-doped NiO thick film for thermoelectric hydrogen gas sensor
    • Shin W., Matsumiya M., Qiu F., Izu N., Murayama N. Li and Na-doped NiO thick film for thermoelectric hydrogen gas sensor. J. Ceram. Soc. Jpn. 110:2002;995-998
    • (2002) J. Ceram. Soc. Jpn , vol.110 , pp. 995-998
    • Shin, W.1    Matsumiya, M.2    Qiu, F.3    Izu, N.4    Murayama, N.5
  • 11
    • 0037049479 scopus 로고    scopus 로고
    • Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si
    • Liu C., Deal M.D., Saraswat K.C., Plummer J.D. Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si. Appl. Phys. Lett. 81:2002;4634-4636
    • (2002) Appl. Phys. Lett , vol.81 , pp. 4634-4636
    • Liu, C.1    Deal, M.D.2    Saraswat, K.C.3    Plummer, J.D.4
  • 12
    • 36449004575 scopus 로고
    • Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films
    • Hayzelden C., Batstone J. Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films. J. Appl. Phys. 73:1993;8279-8289
    • (1993) J. Appl. Phys , vol.73 , pp. 8279-8289
    • Hayzelden, C.1    Batstone, J.2
  • 13
    • 0001533333 scopus 로고    scopus 로고
    • Nickel induced crystallization of amorphous silicon thin films
    • Jin Z., Bhat G., Yeung M., Kwok H., Wong M. Nickel induced crystallization of amorphous silicon thin films. J. Appl. Phys. 84:1998;194-200
    • (1998) J. Appl. Phys , vol.84 , pp. 194-200
    • Jin, Z.1    Bhat, G.2    Yeung, M.3    Kwok, H.4    Wong, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.