Structure and thermoelectric properties of boron doped nanocrystalline Si 0.8Ge 0.2 thin film

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Takashiri, M ^a   Borca Tasciuc, T ^b   Jacquot, A ^c   Miyazaki, K ^d   Chen, G ^e  

^a KOMATSU LTD   (Japan)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

^d KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^e USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATIONS; HEAT CARRIERS; MICROTHERMOELECTRIC DEVICES; NANOCRYSTALLINE THIN FILMS;

ATOMIC FORCE MICROSCOPY; BORON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; SEEBECK EFFECT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY; THERMOELECTRICITY; THIN FILMS; X RAY DIFFRACTION;

NANOSTRUCTURED MATERIALS;

EID: 33748857341     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337392     Document Type: Article

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