Nonvolatile MOSFET memory based on high density WN nanocrystal layer fabricated by novel PNL (Pulsed Nucleation Layer) method

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 190-191

  Lim, Seung Hyun ^a   Joo, Kyong Hee ^a   Park, Jin Ho ^a   Lee, Sang Woo ^a   Sohn, Woong Hee ^a   Lee, Changwon ^a   Choi, Gil Heyun ^a   Yeo, In Seok ^a   Chung, U In ^a   Moon, Joo Tae ^a   Ryu, Byung Il ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Flash; Metal Nanocrystal; Nanocrystal Memory; Nonvolatile Memory; PNL (Pulsed Nucleation Layer); WN

Indexed keywords

DURABILITY; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NUCLEATION; THRESHOLD VOLTAGE;

DOUBLE LAYER STORAGE NODE STRUCTURES; PULSED NUCLEATION LAYER (PNL); STACKED TUNNEL BARRIERS; WN NANOCRYSTAL MEMORY DEVICE;

NONVOLATILE STORAGE;

EID: 33745153788     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469263     Document Type: Conference Paper

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