Enhanced flash memory device characteristics using ALD TiN/Al 2O3 nanolaminate charge storage layers

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 958-961

  Maikap, S ^a   Rahaman, S Z ^a   Banerjee, W ^a   Lin, C H ^b   Tzeng, P J ^b   Wang, C C ^b   Kao, M J ^b   Tsai, M J ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; CHARGE LOSS; CHARGE STORAGES; FLASH MEMORY DEVICES; HIGH DENSITIES; LAYER BY LAYERS; MEMORY DEVICES; MEMORY WINDOWS; NANO-SCALE; NANOCRYSTAL MEMORIES; NANOLAMINATE; OPERATION VOLTAGES; PROGRAMMING SPEED; SMALL DIAMETERS; TIN NANOCRYSTALS;

INTEGRATED CIRCUITS; NANOCRYSTALS; SEMICONDUCTOR STORAGE; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; WINDOWS;

FLASH MEMORY;

EID: 60649097991     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734702     Document Type: Conference Paper

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