Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1719-1722

  Lee, Jae Hoon ^a   Nam, Woo Jin ^a   Shin, Kwang Sub ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

Amorphous semiconductors; Silicon; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; ELECTRON TRAPS; HYSTERESIS; LIGHT EMITTING DIODES; SEMICONDUCTOR MATERIALS;

ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE; AMORPHOUS SEMICONDUCTORS; CHARGE DE-TRAPPING RATE;

THIN FILM TRANSISTORS;

EID: 33744539735     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.143     Document Type: Article

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