Effect of channel width on the electrical characteristics of amorphous/ nanocrystalline silicon bilayer thin-film transistors

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1265-1269

  Hatzopoulos, Argyrios T ^a   Arpatzanis, Nikolaos ^a   Tassis, Dimitrios H ^a   Dimitriadis, Charalabos A ^a   Templier, François ^b   Oudwan, Maher ^b   Kamarinos, George ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b CEA GRENOBLE   (France)

^c IMEP LAHC   (France)

Author keywords

Amorphous silicon (a Si); Channel width; Nanocrystalline silicon (nc Si); Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; NANOCRYSTALLINE SILICON;

BILAYER CHANNEL DEVICE; CHANNEL WIDTH;

THIN FILM TRANSISTORS;

EID: 34247892435     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.894597     Document Type: Article

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