Geometric effect of channel on device performance in pentacene thin-film transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 A, 2004, Pages 7718-7721

  Kang, Seong Jun ^a   Noh, Myungkeun ^a   Park, Dae Sik ^a   Kim, Hui Jung ^a   Kim, Sang Yeol ^b   Koo, Bon Won ^b   Kang, In Nam ^b   Whang, Chung Nam ^a  

^a Yonsei University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Channel length; Channel width; Field effect mobility; ITO; Pentacene

Indexed keywords

AMORPHOUS SILICON; EVAPORATION; GLASS; GRAIN BOUNDARIES; LIGHT EMITTING DIODES; OPTIMIZATION;

CHANNEL LENGTH; CHANNEL WIDTH; FIELD EFFECT MOBILITY; ITO; PENTACENE;

THIN FILM TRANSISTORS;

EID: 11144228907     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7718     Document Type: Article

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