Effect of ZnO buffer layer on AZO film properties and photovoltaic applications

Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 10, 2010, Pages 1005-1013

  Shi, J H ^a   Huang, S M ^a   Chu, J B ^a   Zhu, H B ^a   Wang, Z A ^a   Li, X D ^a   Zhang, D W ^a   Sun, Z ^a   Cheng, W J ^a   Huang, F Q ^b   Yin, X J ^c  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

^c SINGAPORE POLYTECHNIC   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-DOPED ZNO; ANTIREFLECTIVE FILMS; ARGON AMBIENT; AZO FILMS; BI-LAYER; CIGS SOLAR CELLS; COATING PROCESS PARAMETER; DEPOSITION PRESSURES; ELECTRICAL AND OPTICAL PROPERTIES; GALLIUM SELENIDES; GLASS SUBSTRATES; LAYERED FILMS; LOW COSTS; LOW VACUUM; PHOTOVOLTAIC APPLICATIONS; PLASMA PHYSICS; RADIO FREQUENCY MAGNETRON SPUTTERING; RESIDUAL PRESSURES; RF-POWER; ROOM TEMPERATURE; SPUTTERING PRESSURES; THIN FILM SOLAR CELLS; TRANSPARENT CONDUCTING FILMS; TRANSPARENT CONDUCTIVE; ZNO; ZNO BUFFER LAYER; ZNO FILMS; ZNO LAYERS;

ALUMINUM COATINGS; ARGON; BUFFER LAYERS; CARRIER CONCENTRATION; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; EPITAXIAL LAYERS; GALLIUM; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; INDIUM; METALLIC FILMS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SOLAR CELLS; SUBSTRATES; ZINC OXIDE;

OPTICAL FILMS;

EID: 77957913429     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-009-0028-8     Document Type: Article

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