Effects of cap layer and grain structure on electromigration reliability of Cu/low-k interconnects for 45 nm technology node

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 581-585

  Zhang, L ^a   Zhou, J P ^a   Im, J ^a   Ho, P S ^a   Aubel, O ^b   Hennesthal, C ^b   Zschech, E ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b GLOBALFOUNDRIES   (Germany)

^c FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

Author keywords

CoWP cap; Cu interconnect; Electromigration; Failure mode; Grain structure; Scaling

Indexed keywords

45NM TECHNOLOGY; CAP LAYERS; CAPPED SAMPLES; COWP CAP; CU INTERCONNECT; CU LINES; CU/LOW-K INTERCONNECTS; ELECTROMIGRATION RELIABILITY; GRAIN SIZE; GRAIN STRUCTURES; INTERFACIAL MASS TRANSPORT; LARGE-GRAIN; LIFETIME IMPROVEMENT; METAL CAP; PROCESS PARAMETERS; SCALING; SCALING EFFECTS; SMALL GRAINS; VOID FORMATION;

COBALT COMPOUNDS; CRYSTAL MICROSTRUCTURE; ELECTROMIGRATION; FAILURE MODES; GRAIN SIZE AND SHAPE; NANOTECHNOLOGY; RELIABILITY ANALYSIS;

QUALITY ASSURANCE;

EID: 77957904217     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488766     Document Type: Conference Paper

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