Enhancing the electromigration resistance of copper interconnects

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 162-164

  Dixit, G ^a   Padhi, D ^a   Gandikota, S ^a   Yahalom, J ^a   Parikh, S ^a   Yoshida, N ^a   Shankaranarayanan, K ^a   Chen, J ^a   Maity, N ^a   Yu, J ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

Aluminum; Atomic layer deposition; Copper; Delay; Dielectrics; Electromigration; Etching; Integrated circuit interconnections; Planarization; Silicon compounds

Indexed keywords

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; COPPER; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC MATERIALS; ELECTROMIGRATION; ETCHING; GRAIN BOUNDARIES; SILICON COMPOUNDS;

CHEMICAL VAPOR DEPOSITED; COPPER INTERCONNECTION; COPPER INTERCONNECTS; DELAY; ELECTROMIGRATION RESISTANCE; FAILURE DISTRIBUTIONS; INTEGRATED CIRCUIT INTERCONNECTIONS; PLANARIZATION;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84944056833     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219742     Document Type: Conference Paper

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