Alpha-particle-induced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 213-217

  Fuketa, Hiroshi ^a,b   Hashimoto, Masanori ^a,b   Mitsuyama, Yukio ^a,b   Onoye, Takao ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BODY BIASING; MANUFACTURING VARIABILITY; MEASUREMENT RESULTS; MEMORY CELL; MULTIPLE CELL UPSET; PARTICLE-INDUCED SOFT ERRORS; SOFT ERROR; SOFT ERROR RATE; SUB-THRESHOLD SRAM; SUBTHRESHOLD REGION; SUPPLY VOLTAGES;

ERROR CORRECTION; MANUFACTURE; MEASUREMENT ERRORS; STATIC RANDOM ACCESS STORAGE;

MICROPROCESSOR CHIPS;

EID: 77957893965     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488826     Document Type: Conference Paper

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