Basal-plane slip in InGaNGaN heterostructures in the presence of threading dislocations

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Mei, J ^a   Liu, R ^a   Ponce, F A ^a   Omiya, H ^b   Mukai, T ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE SLIP; SAPPHIRE SUBSTRATES; THREADING DISLOCATIONS;

DENSITY (SPECIFIC GRAVITY); DEPOSITION; EPILAYERS; LATTICE MISMATCH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS;

HETEROJUNCTIONS;

EID: 34248547746     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2732817     Document Type: Article

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